.MODEL MODN NMOS LEVEL=7 * ---------------------------------------------------------------------- ************************* SIMULATION PARAMETERS ************************ * ---------------------------------------------------------------------- * format : PSPICE * model : MOS BSIM3v3 * process : CS[ADFI] * revision : 2; * extracted : CSA C61417; 2000-12; ese(5487) * doc# : 9933016 REV_2 * ---------------------------------------------------------------------- * WORST CASE ZERO CONDITION * ---------------------------------------------------------------------- * * *** Flags *** +MOBMOD =1.000e+00 CAPMOD =2.000e+00 +NLEV =0 NOIMOD =1.000e+00 * *** Threshold voltage related model parameters *** +K1 =7.001e-01 +K2 =-1.08e-02 K3 =-1.72e+00 K3B =6.325e-01 +NCH =2.747e+17 VTH0 =5.755e-01 +VOFF =-5.72e-02 DVT0 =2.227e+01 DVT1 =1.051e+00 +DVT2 =3.393e-03 KETA =-6.21e-04 +PSCBE1 =2.756e+08 PSCBE2 =9.645e-06 +DVT0W =0.000e+00 DVT1W =0.000e+00 DVT2W =0.000e+00 * *** Mobility related model parameters *** +UA =1.000e-12 UB =1.723e-18 UC =5.756e-11 +U0 =3.881e+02 * *** Subthreshold related parameters *** +DSUB =5.000e-01 ETA0 =3.085e-02 ETAB =-3.95e-02 +NFACTOR=1.119e-01 * *** Saturation related parameters *** +EM =4.100e+07 PCLM =6.831e-01 +PDIBLC1=1.076e-01 PDIBLC2=1.453e-03 DROUT =5.000e-01 +A0 =2.208e+00 A1 =0.000e+00 A2 =1.000e+00 +PVAG =0.000e+00 VSAT =1.178e+05 AGS =2.490e-01 +B0 =-1.76e-08 B1 =0.000e+00 DELTA =1.000e-02 +PDIBLCB=2.583e-01 * *** Geometry modulation related parameters *** +W0 =1.184e-07 DLC =-2.82e-08 +DWB =0.000e+00 DWG =0.000e+00 +LL =0.000e+00 LW =0.000e+00 LWL =0.000e+00 +LLN =1.000e+00 LWN =1.000e+00 WL =0.000e+00 +WW =0.000e+00 WWL =0.000e+00 WLN =1.000e+00 +WWN =1.000e+00 * *** Temperature effect parameters *** +AT =3.300e+04 UTE =-1.80e+00 +KT1 =-3.30e-01 KT2 =2.200e-02 KT1L =0.000e+00 +UA1 =0.000e+00 UB1 =0.000e+00 UC1 =0.000e+00 +PRT =0.000e+00 * *** Overlap capacitance related and dynamic model parameters *** +CGDO =1.120e-10 CGSO =1.120e-10 CGBO =1.100e-10 +CGDL =1.530e-10 CGSL =1.530e-10 CKAPPA =6.000e-01 +CF =0.000e+00 ELM =5.000e+00 +XPART =1.000e+00 CLC =1.000e-15 CLE =6.000e-01 * *** Parasitic resistance and capacitance related model parameters *** +RDSW =6.043e+02 +CDSC =0.000e+00 CDSCB =0.000e+00 CDSCD =8.448e-05 +PRWB =0.000e+00 PRWG =0.000e+00 CIT =1.000e-03 * *** Process and parameters extraction related model parameters *** +TOX =7.500e-09 NGATE =0.000e+00 +NLX =1.918e-07 * *** Substrate current related model parameters *** +ALPHA0 =0.000e+00 BETA0 =3.000e+01 * *** Noise effect related model parameters *** +AF =1.400e+00 KF =2.810e-27 EF =1.000e+00 +NOIA =1.000e+20 NOIB =5.000e+04 NOIC =-1.40e-12 * *** Common extrinsic model parameters *** +LINT =-4.17e-08 WINT =2.676e-08 XJ =3.000e-07 +RSH =9.406e+01 JS =2.000e-05 +CJ =1.116e-03 CJSW =3.360e-10 +CBD =0.000e+00 CBS =0.000e+00 IS =0.000e+00 +MJ =3.100e-01 N =1.000e+00 MJSW =1.900e-01 +PB =6.900e-01 TT =0.000e+00 +PBSW =6.900e-01 * ---------------------------------------------------------------------- .MODEL MODP PMOS LEVEL=7 * ---------------------------------------------------------------------- ************************* SIMULATION PARAMETERS ************************ * ---------------------------------------------------------------------- * format : PSPICE * model : MOS BSIM3v3 * process : CS[ADFI] * revision : 2; * extracted : CSA C61417 A64770; 2000-12; ese(5487) * doc# : 9933016 REV_2 * ---------------------------------------------------------------------- * WORST CASE ZERO CONDITION * ---------------------------------------------------------------------- * * *** Flags *** +MOBMOD =1.000e+00 CAPMOD =2.000e+00 +NLEV =0 NOIMOD =1.000e+00 * *** Threshold voltage related model parameters *** +K1 =4.357e-01 +K2 =-2.45e-02 K3 =4.540e+00 K3B =-8.52e-01 +NCH =8.101e+16 VTH0 =-4.87e-01 +VOFF =-1.13e-01 DVT0 =1.482e+00 DVT1 =3.884e-01 +DVT2 =-1.15e-02 KETA =-2.56e-02 +PSCBE1 =1.000e+09 PSCBE2 =1.000e-08 +DVT0W =0.000e+00 DVT1W =0.000e+00 DVT2W =0.000e+00 * *** Mobility related model parameters *** +UA =2.120e-10 UB =8.290e-19 UC =-5.28e-11 +U0 =1.413e+02 * *** Subthreshold related parameters *** +DSUB =5.000e-01 ETA0 =2.293e-01 ETAB =-3.92e-03 +NFACTOR=8.237e-01 * *** Saturation related parameters *** +EM =4.100e+07 PCLM =2.979e+00 +PDIBLC1=3.310e-02 PDIBLC2=1.000e-09 DROUT =5.000e-01 +A0 =1.423e+00 A1 =0.000e+00 A2 =1.000e+00 +PVAG =0.000e+00 VSAT =2.000e+05 AGS =3.482e-01 +B0 =2.719e-07 B1 =0.000e+00 DELTA =1.000e-02 +PDIBLCB=-1.78e-02 * *** Geometry modulation related parameters *** +W0 =4.894e-08 DLC =3.480e-08 +DWB =0.000e+00 DWG =0.000e+00 +LL =0.000e+00 LW =0.000e+00 LWL =0.000e+00 +LLN =1.000e+00 LWN =1.000e+00 WL =0.000e+00 +WW =0.000e+00 WWL =0.000e+00 WLN =1.000e+00 +WWN =1.000e+00 * *** Temperature effect parameters *** +AT =3.300e+04 UTE =-1.35e+00 +KT1 =-5.70e-01 KT2 =2.200e-02 KT1L =0.000e+00 +UA1 =0.000e+00 UB1 =0.000e+00 UC1 =0.000e+00 +PRT =0.000e+00 * *** Overlap capacitance related and dynamic model parameters *** +CGDO =7.420e-11 CGSO =7.420e-11 CGBO =1.100e-10 +CGDL =1.117e-10 CGSL =1.117e-10 CKAPPA =6.000e-01 +CF =0.000e+00 ELM =5.000e+00 +XPART =1.000e+00 CLC =1.000e-15 CLE =6.000e-01 * *** Parasitic resistance and capacitance related model parameters *** +RDSW =1.853e+03 +CDSC =6.994e-04 CDSCB =2.943e-04 CDSCD =1.970e-04 +PRWB =0.000e+00 PRWG =0.000e+00 CIT =1.173e-04 * *** Process and parameters extraction related model parameters *** +TOX =7.500e-09 NGATE =0.000e+00 +NLX =1.770e-07 * *** Substrate current related model parameters *** +ALPHA0 =0.000e+00 BETA0 =3.000e+01 * *** Noise effect related model parameters *** +AF =1.290e+00 KF =1.090e-27 EF =1.000e+00 +NOIA =1.000e+20 NOIB =5.000e+04 NOIC =-1.40e-12 * *** Common extrinsic model parameters *** +LINT =-5.64e-08 WINT =4.845e-08 XJ =3.000e-07 +RSH =1.188e+02 JS =2.000e-05 +CJ =1.136e-03 CJSW =3.040e-10 +CBD =0.000e+00 CBS =0.000e+00 IS =0.000e+00 +MJ =5.500e-01 N =1.000e+00 MJSW =3.900e-01 +PB =1.020e+00 TT =0.000e+00 +PBSW =1.020e+00 * ----------------------------------------------------------------------